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Modeling Klein tunneling and caustics of electron waves in graphene

机译:石墨烯中克莱因隧穿和电子波焦散的模拟

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摘要

We employ the tight-binding propagation method to study Klein tunneling andquantum interference in large graphene systems. With this efficient numericalscheme, we model the propagation of a wave packet through a potential barrierand determine the tunneling probability for different incidence angles. Weconsider both sharp and smooth potential barriers in n-p-n and n-n' junctionsand find good agreement with analytical and semiclassical predictions. When wego outside the Dirac regime, we observe that sharp n-p junctions no longer showKlein tunneling because of intervalley scattering. However, this effect can besuppressed by considering a smooth potential. Klein tunneling holds forpotentials changing on the scale much larger than the interatomic distance.When the energies of both the electrons and holes are above the Van Hovesingularity, we observe total reflection for both sharp and smooth potentialbarriers. Furthermore, we consider caustic formation by a two-dimensionalGaussian potential. For sufficiently broad potentials we find a good agreementbetween the simulated wave density and the classical electron trajectories.
机译:我们采用紧密结合传播方法来研究大型石墨烯系统中的克莱因隧道效应和量子干涉。利用这种有效的数值方案,我们可以对波包通过势垒的传播进行建模,并确定不同入射角的隧穿概率。我们考虑了n-p-n和n-n'结中的尖锐和平滑势垒,并发现与分析和半经典预测有很好的一致性。当在Dirac政权以外的地方wego进行飞行时,我们观察到由于n间隔的散射,尖锐的n-p结不再显示克莱因隧道效应。但是,可以通过考虑平滑电位来抑制这种影响。克莱因隧穿使势能的变化远大于原子间的距离,当电子和空穴的能量都超过Van Hovesingularity时,我们观察到尖锐和光滑势垒的全反射。此外,我们考虑通过二维高斯势来形成苛性碱。对于足够宽的电势,我们在模拟波密度和经典电子轨迹之间找到了很好的一致性。

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